SiC IGBT

Insulated gate bipolar transistors (IGBTs) are the most used power electronic components in industrial applications, offering the fast switching of electric currents to achieve low switching losses. ZONKY's IGBTs adopt silicon carbide (SiC) technology. SiC devices offer a number of attractive charcteristics for high voltage power semiconductors when compared to commonly used Silicon (Si). ZONKY’s silicon carbide semiconductors deliver fast switching speed, low forward drop, and temperature stability, enabling a range of high-power and high-voltage applications. Our selection of SiC Schottky barrier diodes and SiC MOSFETs provide ruggedness, reliability, and wider bandgap, making them ideal for renewable energy systems and industrial automation.
ZONKY’s IGBT product portfolio provides a broad variety of different devices for a wide range of applications in the fields of automotive, traction, energy transmission, industrial, and consumer systems. These solutions offer very low power losses in the forward and blocking state, only require low drive power, and have a high efficiency. Select the right IGBT solution for your needs from ZONKY’s extensive portfolio.
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Collector-Emitter Voltage VCE (V)
DC Collector Current IC (A)
RDS(ON) mΩ
RthJC (K/W)
1200
360
3.6
0.1
1700
500
3.5
0.057
1200
600
2
0.065
750
800
1.4
0.073
1200
120
8
0.23
1200
200
5.3
0.16
1200
150
8
0.23
1200
300
4
0.12
1200
450
2.8
0.078
1700
200
8.8
0.11
1700
300
5.8
0.073
1200
150
8
0.23
1200
300
4
0.12
1200
450
2.8
0.078
1200
600
2
0.065
1700
200
8.8
0.11
1700
300
5.8
0.073
1700
400
4.4
0.065
1200
80
20
0.43
1200
120
13.5
0.29
1200
150
8
0.31
1200
150
8
0.31
1200
225
5.3
0.21
1200
300
4
0.15
750
200
6
0.31
750
300
4
0.21
1200
120
8
0.23
1200
200
5.3
0.16
1200
150
8
0.23
1200
300
4
0.12
1200
450
2.8
0.078
1700
200
8.8
0.11
1700
300
5.8
0.073
1200
150
8
0.23
1200
300
4
0.12
1200
450
2.8
0.078
1200
600
2
0.065
1700
200
8.8
0.11
1700
300
5.8
0.073
1700
400
4.4
0.065
1700
500
3.5
0.057